aug. 1999 20k 2k 200 2k input com v cc output gnd the six circuits share the v cc , com and gnd. the diodes shown by broken line are parasite diodes and must not be used. unit : w 1 nc ? inputs outputs nc : no connection in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? ? com common gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? v cc outline 16p4(p) output, h current per circuit output, l pulse width 35ms, duty cycle 5% ta = 25 c, when mounted on board supply voltage collector-emitter voltage collector current input voltage clamping diode reverse voltage clamping diode forward current power dissipation operating temperature storage temperature pin configuration (top view) mitsubishi semiconductor M54539P 6-unit 700ma transistor array with clamp diode description M54539P six-circuit transistor arrays. the circuits are made of npn transistors. both the semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. features l medium breakdown voltage (bv ceo 3 20v) l high-current driving (ic(max) = 700ma) l with output clamping diodes l wide operating temperature range (ta = C20 to +75 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and drives of thermal printer function the M54539P have six circuits consisting of npn transistors. resistance of 2k w is connected to the inputs. the output transistor emitters are connected to the gnd pin (pin 8). a spick-killer clamping diode is provided between each collec- tor and com pin (pin 9), v cc is connected to pin 16. the collector current is 700 ma maximum. collector-emitter supply voltage is 20v maximum. circuit schematic 10 C0.5 ~ +20 700 C0.5 ~ +10 20 700 350 1.47 C20 ~ +75 C55 ~ +125 v cc v ceo i c v i v r i f p d t opr t stg v v ma v v ma w c c ratings unit symbol parameter conditions absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c)
aug. 1999 v cc = 6.5v, the three outputs conducting simultaneously percent duty cycle less than 20% ton 50% 50% 50% 50% toff input output pg output 50 w (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 3v p-p (2) input-output conditions : r l = 22.5 w , v o = 10v, v cc = 5v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes c l measured device open input v o v cc r l v ma 0.46 0.2 0.75 1.5 27.5 8000 20 3000 v (br) ceo i cc h fe mitsubishi semiconductor M54539P 6-unit 700ma transistor array with clamp diode recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) v v ce (sat) v v v v 5 7 20 6 0.3 0 0 ma 3 0 3 0 700 200 0.8 0.45 1.4 100 2.7 50 v cc = 7v, i ceo = 100 m a v i = 3v, v cc = 5v, i c = 450ma v i = 3v, v cc = 5v, i c = 200ma v cc = 7v, v i = 3.2v v r = 20v i f = 350ma v cc = 7v, v i = 3.2v (per operating one circuit) v ce = 4v, v cc = 6v, i c = 300ma, ta = 25 c symbol unit parameter test conditions limits min typ + max + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns t on t off 16 1000 symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit symbol parameter min typ max unit limits v cc v o v ih v il i c supply voltage output voltage h input voltage l input voltage collector current per channel v cc = 6.5v, the three outputs conducting simultaneously percent duty cycle less than 90% collector-emitter breakdown voltage supply current dc amplification factor collector-emitter saturation voltage electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) switching characteristics (unless otherwise noted, ta = 25 c) turn-on time turn-off time c l = 15pf (note 1) input current clamping diode reverse current clamping diode forward voltage i i i r v f ma m a v ic 450ma
aug. 1999 mitsubishi semiconductor M54539P 6-unit 700ma transistor array with clamp diode typical characteristics thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) collector current ic (ma) duty-cycle-collector characteristics duty cycle (%) the collector current values represent the current per circuit. repeated frequency 3 10hz the value in the circle represents the value of the simultaneously- operated circuit. v cc = 6.5v ta = 25 c 1 2 3 collector current ic (ma) duty-cycle-collector characteristics dc amplification factor collector current characteristics grounded emitter transfer characteristics duty cycle (%) 1 2 3 4 5 6 collector current ic (ma) collector current ic (ma) dc amplification factor h fe input voltage v i (v) collector current ic (ma) 0 200 400 600 800 0 0.2 0.4 0.6 0.8 1.0 ta = e20 c ta = 25 c ta = 75 c v i = 3v v cc = 5v ta = e20 c ta = 25 c ta = 75 c ta = e20 c ta = 25 c ta = 75 c v cc = 6v v ce = 4v ta = e20 c ta = 25 c ta = 75 c ta = e20 c ta = 25 c ta = 75 c v cc = 6v v ce = 4v ta = e20 c ta = 25 c ta = 75 c 0 200 400 600 800 0 20406080100 0 200 400 600 800 0 20406080100 10 1 10 2 357 10 3 357 10 3 10 4 3 5 7 10 5 3 5 7 0 200 400 600 800 0 0.5 1.0 1.5 2.0 2.5 the collector current values represent the current per circuit. repeated frequency 3 10hz the value in the circle represents the value of the simultaneously- operated circuit. v cc = 6.5v ta = 75 c 4 5 6
aug. 1999 mitsubishi semiconductor M54539P 6-unit 700ma transistor array with clamp diode input characteristics input voltage v i (v) 0 0 1 2 3 4 5 246810 input current i i (ma) clamping diode characteristics forward bias voltage v f (v) forward bias current i f (ma) v cc = 7v ta = ?0 c ta = 25 c ta = 75 c ta = ?0 c ta = 25 c ta = 75 c supply current characteristics supply voltage v cc (v) 0 0 10 20 30 40 50 246810 supply current icc (ma) v i = 3.2v ta = ?0 c ta = 25 c ta = 75 c 0 200 400 600 800 0 0.5 1.0 1.5 2.0 2.5
|
